Research Activities

Publications


Journal Publications:

* Corresponding Author   † Equal Contribution


  1. Faisal Bashir, Furqan Zahoor, Ali Alzahrani and Haider Abbas , "Energy-efficient neuromorphic system using novel tunnel FET based LIF neuron design for adaptable threshold logic and image analysis applications", Scientific Reports, 15, 12638 (2025)    DOI:  10.1038/s41598-025-93727-6
  2. Faisal Bashir, Ali Alzahrani, Haider Abbas*  and Furqan Zahoor, “Toward Cognitive Machines: Evaluating Single Device Based Spiking Neural Networks for Brain-Inspired Computing”, ACS Applied Electronic Materials , 7, 1329–1341 (2025)    DOI: 10.1021/acsaelm.4c02015
  3. Haider Abbas* , Jiayi Li, Asif Ali, Sajjad Hussain, Jongwan Jung and Diing Shenp Ang*, "Emulation of short-term and long-term synaptic plasticity with high uniformity in chalcogenide-based diffusive memristor device for neuromorphic applications", Journal of Materials Science & Technology , 216, 99–107 (2025)   DOI: 10.1016/j.jmst.2024.07.033
  4. Zaigham Abbas, Gul Hassan, Muhammad Umair Khan,  Haider Abbas , Basheer Ahmad, Ahmed Shuja, Memoon Sajid, Jinho Bae and Changhwan Choi, "Polyurethane Packed Graphene-Coated Spider Silk by Dip-Casting for Highly Stretchable Strain Sensor", Journal of Materials Chemistry B , 13, 3437–3447 (2025)   DOI: 10.1039/D4TB01164C
  5. Turgun Boynazarov, Joonbong Lee, Hojin Lee, Sangwoo Lee, Hyunbin Chung, Dae Haa Ryu, Haider Abbas  and Taekjib Choi, "Enhanced synaptic properties in HfO2-based trilayer memristor by using ZrO2-x oxygen vacancy reservoir layer for neuromorphic computing", Journal of Materials Science & Technology , 227, 164–173 (2025)   DOI: 10.1016/j.jmst.2024.12.020
  6. Furqan Zahoor, Arshid Nisar, Usman Bature Isyaku, Haider Abbas* , Faisal Bashir*, Anupam Chattopadhyay, Brajesh Kumar Kaushik, Ali Alzahrani and Fawnizu Azmadi Hussin, "An overview of critical applications of resistive random access memory", Nanoscale Advances , 6, 4980-5006 (2024)   DOI: 10.1039/d4na00158c
  7. Joonbong Lee, Myeong Seop Song, Woo-Sung Jang, Hojin Lee, Sangwoo Lee, Turgun Boynazarov, Young-Min Kim, Seung Chul Chae, Haider Abbas* and Taekjib Choi*, "Artificial Nociceptor Based on Interface Engineered Ferroelectric Volatile Memristor", Applied Materials Today , 39, 102346 (2024)   DOI: 10.1016/j.apmt.2024.102346
  8. Asif Ali, Haider Abbas , Jiayi Li, Jongwan Jung and Diing Shenp Ang, "GAg/Ti/GeS/Ag Bidirectional Conductive-Bridge Selector with Low Turn-Off Latency, High Endurance, and Enhanced Switching Uniformity", ACS Applied Electronic Materials , (2024)   DOI: 10.1021/acsaelm.4c01392
  9. Faisal Bashir*, Furqan Zahoor, Haider Abbas* , Ali Alzahrani and Mehwish Hanif, "Dielectrically Modulated Single Schottky Barrier and Electrostatically Doped Drain Based FET for Biosensing Applications", IEEE Access , 12, 130022-130027 (2024)   DOI: 10.1109/ACCESS.2024.3457748
  10. Furqan Zahoor, Ramzi A Jaber, Usman Bature Isyaku, Trapti Sharma, Faisal Bashir, Haider Abbas* , Ali S Alzahrani, Shagun Gupta and Mehwish Hanif*, "Design Implementations of Ternary Logic Systems: A Critical Review", Results in Engineering , 23, 102761 (2024)   DOI: 10.1016/j.rineng.2024.102761
  11. Jiayi Li, Haider Abbas , Diing Shenp  Ang , AsifAli and  10.1039/D3NH00180F
  12. Haider Abbas* , Asif Ali, Jiayi Li, Thaw Tint Te Tun and Diing Shenp Ang*, “Forming-free, self-compliant WTe2-based Conductive Bridge RAM with Highly Uniform Multilevel Switching for High-density Memory”, IEEE Electron Device Letters , 44 (2), 253–256 (2023)   DOI: 10.1109/LED.2022.3231646
  13. Asif Ali, Haider Abbas , Jiayi Li and Diing Shenp Ang, "GeS conducting-bridge resistive memory device with IGZO buffer layer for highly uniform and repeatable switching", Applied Physics Letters , 122, 203503 (2023)   DOI: 10.1063/5.0149760
  14. Furqan Zahoor, Fawnizu Azmadi Hussin, Usman Bature Isyaku, Shagun Gupta, Farooq Ahmad Khanday, Anupam Chattopadhyay and Haider Abbas , "Resistive random access memory: introduction to device mechanism, materials and application to neuromorphic computing", Nanoscale Research Letters (Discover Nano) , 18, 36 (2023) DOI: 10.1186/s11671-023-03775-y
  15. Furqan Zahoor, Mehwish Hanif, Usman Isyaku Bature, Srinivasu Bodapati, Anupam Chattopadhyay, Fawnizu Azmadi Hussin, Haider Abbas , Farhad Merchant and Faisal Bashir, "Carbon nanotube field effect transistors: an overview of device structure, modeling, fabrication and applications", Physica Scripta , 98, 082003 (2023)   DOI: 10.1088/1402-4896/ace855
  16. Usman Isyaku Bature, Illani Mohd Nawi, Mohd Haris Md Khair, Furqan Zahoor, Saeed S. Ba Hashwan, Abdullah Saleh Algamili and Haider Abbas , "Analysis of thermodynamic resistive switching in ZnO-based RRAM device", Physica Scripta , 98, 035020 (2023)   DOI: 10.1088/1402-4896/acbb3f
  17. Asif Ali, Haider Abbas , Muhammad Hussain, Hassan Abbas Jaffery, Sajjad Hussain, Changhwan Choi and Jongwan Jung, "Versatile GeS-based CBRAM with compliance-current-controlled threshold and bipolar resistive switching for electronic synapses", Applied Materials Today, 29, 101554 (2022)   DOI: 10.1016/j.apmt.2022.101554
  18. Haider Abbas , Jiayi Li and Diing Shenp Ang, "Conductive Bridge Random Access Memory (CBRAM): Challenges and Opportunities for Memory and Neuromorphic Computing Applications", Micromachines, 13 (5), 725 (2022)  [Featured Paper , Editor's Choice]     DOI: 10.3390/mi13050725
  19.  Muhammad Ismail†, Haider Abbas† , Chandreswar Mahata, Changhwan Choi and Sungjun Kim, "Optimization of the Thickness of Ta2O5 Interfacial Layer to Limit the Oxidation of Ta Ohmic Interface and ZrO2 Switching Layer for Multilevel Data Storage", Journal of Materials Science & Technology, 106, 98–107 (2022) DOI: 10.1016/j.jmst.2021.08.012
  20. Tassawar Hussain†, Haider Abbas† , Chulmin Youn, Hojin Lee, Turgun Boynazarov, Boncheol Ku, Yu-Rim Jeon, Hoonhee Han, Jong Hyeon Lee, Changhwan Choi, and Taekjib Choi "Cellulose Nanocrystal based Bio-memristor as a Green Artificial Synaptic Device for Neuromorphic Computing Applications", Advanced Materials Technologies, 7 (2), 2100744 (2022)   DOI: 10.1002/admt.202100744
  21. Sobia Ali Khan, Fayyaz Hussain, Daewon Chung, Mehr Khalid Rahmani, Muhammad Ismail, Chandreswar Mahata, Yawar Abbas, Haider Abbas , Changhwan Choi, Alexey N. Mikhaylov, Sergey A. Shchanikov, Byung-Do Yang, and Sungjun Kim, "Memristive Switching and Density-Functional Theory Calculations in Double Nitride Insulating Layers", Micromachines, 13(9), 1498 (2022)   DOI: 10.3390/mi13091498
  22. Asif Ali, Haider Abbas , Muhammad Hussain, Hassan Abbas Jaffery, Sajjad Hussain, Changhwan Choi and Jongwan Jung, "Thickness-dependent monochalcogenide GeSe-based CBRAM for memory and artificial electronic synapses", Nano Research, 15(3), 2263–2277 (2021)   DOI: 10.1007/s12274-021-3793-1
  23. Muhammad Ismail†, Haider Abbas† , Andrey S. Sokolov, Chandreswar Mahata, Changhwan Choi and Sungjun Kim, “Emulating synaptic plasticity and resistive switching characteristics through amorphous Ta2O5 embedded layer for neuromorphic computing”, Ceramics International, 47(21), 30764-30776 (2021)   DOI: 10.1016/j.ceramint.2021.07.257
  24. Muhammad Ismail, Chandreswar Mahata, Haider Abbas , Changhwan Choi and Sungjun Kim, “Bipolar, complementary resistive switching and synaptic properties of sputtering deposited ZnSnO-based devices for electronic synapses”, Journal of Alloys and Compounds, 862, 158416 (2021)   DOI: 10.1016/j.jallcom.2020.158416
  25. Andrey S. Sokolov†, Haider Abbas† , Yawar Abbas and Changhwan Choi, "Towards Engineering in Memristors for Emerging Memory and Neuromorphic Computing: A Review", Journal of Semiconductors, 42(1), 013101 (2021)  DOI: 10.1088/1674-4926/42/1/013101
  26. Ghulam Dastgeer†, Haider Abbas† , Duk Young Kim, Jonghwa Eom and Changhwan Choi, "Synaptic Characteristics of an Ultrathin Hexagonal Boron Nitride (h‐BN) Diffusive Memristor", physica status solidi (RRL) - Rapid Research Letters, 15(1), 2000473 (2020)  DOI: 10.1002/pssr.202000473
  27. Jinju Lee, Ji-Ho Ryu, Boram Kim, Fayyaz Hussain, Chandreswar Mahata, Eunjun Sim, Muhammad Ismail, Yawar Abbas, Haider Abbas , Dong Keun Lee, Min-Hwi Kim, Yoon Kim, Changhwan Choi, Byung-Gook Park and Sungjun Kim, "Synaptic Characteristics of Amorphous Boron Nitride-based Memristors on a Highly Doped Silicon Substrate for Neuromorphic Engineering", ACS Applied Materials and Interfaces, 12, 33908−33916 (2020)   DOI: 10.1021/acsami.0c07867
  28. Muhammad Ismail†, Haider Abbas† , Changhwan Choi and Sungjun Kim, “Controllable analog resistive switching and synaptic characteristics in ZrO2/ZTO bilayer memristive device for neuromorphic systems”, Applied Surface Science, 529, 147107 (2020)   DOI: 10.1016/j.apsusc.2020.147107
  29. Haider Abbas , Yawar Abbas, Gul Hassan, Andrey Sergeevich Sokolov, Yu-Rim Jeon, Boncheol Ku, Chi Jung Kang and Changhwan Choi, "The Coexistence of Threshold and Memory Switching Characteristics of ALD HfO2 Memristor Synaptic Arrays for Energy-Efficient Neuromorphic Computing", Nanoscale, 12, 14120-14134 (2020) [Featured as one of the most popular articles by authors based in Asia]   DOI: 10.1039/D0NR02335C
  30. Muhammad Ismail, Haider Abbas , Changhwan Choi and Sungjun Kim, "Stabilized and RESET-voltage controlled multi-level switching characteristics in ZrO2-based memristors by inserting a-ZTO interface layer", Journal of Alloys and Compounds, 835, 155256 (2020)   DOI: 10.1016/j.jallcom.2020.155256
  31. Asif Ali, Yawar Abbas, Haider Abbas , Yu-Rim Jeon, Sajjad Hussain, Bilal Abbas Naqvi, Changhwan Choi and Jongwan Jung, “Dependence of InGaZnO and SnO2 Thin Film Stacking Sequence for the Resistive Switching Characteristics of Conductive Bridge Memory Devices”, Applied Surface Science, 525, 146390 (2020)  DOI: 10.1016/j.apsusc.2020.146390
  32. Tae Sung Lee, Nam Joo Lee, Haider Abbas , Hyun-Ho Lee, Tae-Sik Yoon and Chi Jung Kang, “Compliance current-controlled conducting filaments formation in tantalum oxide-based RRAM devices with different top electrodes”, ACS Applied Electronic Materials, 2, 1154-1161 (2020)   DOI: 10.1021/acsaelm.0c00128
  33. Haider Abbas , Asif Ali, Jongwan Jung, Quanli Hu, Mi Ra Park, Hyun Ho Lee, Tae-Sik Yoon and Chi Jung Kang, “Reversible transition of volatile to non-volatile resistive switching and compliance current-dependent multistate switching in IGZO/MnO RRAM devices”, Applied Physics Letters, 114, 093503 (2019)   DOI: 10.1063/1.5082901
  34. Quanli Hu†, Haider Abbas† , Tae Su Kang, Tae Sung Lee, Nam Joo Lee, Mi Ra Park, Tae-Sik Yoon, Jaewan Kim and Chi Jung Kang, "Forming-free resistive switching characteristics in manganese oxide and hafnium oxide devices", Japanese Journal of Applied Physics, 58, 044001 (2019)  DOI: 10.7567/1347-4065/ab01f8
  35. Quanli Hu, Tae Su Kang, Haider Abbas , Tae Sung Lee, Nam Joo Lee, Tae-Sik Yoon, Jaewan Kim, Mi Ra Park and Chi Jung Kang, “Forming-free resistive switching characteristics of manganese oxide and cerium oxide bilayers with crossbar array structure”, Japanese Journal of Applied Physics, 57, 086501 (2018)   DOI: 10.7567/JJAP.57.086501
  36. Haider Abbas , Mi Ra Park, Yawar Abbas, Quanli Hu, Tae Su Kang, Tae-Sik Yoon and Chi Jung Kang, “Resistive switching characteristics of manganese oxide thin film and nanoparticle assembly hybrid devices”, Japanese Journal of Applied Physics, 57, 06HC03 (2018)   DOI: 10.7567/JJAP.57.06HC03
  37. Quanli Hu, Mi Ra Park, Haider Abbas , Tae Su Kang, Tae-Sik Yoon and Chi Jung Kang, “Forming-free resistive switching characteristics in tantalum oxide and manganese oxide based crossbar array structure”, Microelectronic Engineering, 190, 7-10 (2018)   DOI: 10.1016/j.mee.2018.01.005 
  38. Quanli Hu, Tae Su Kang, Haider Abbas , Tae Sung Lee, Nam Joo Lee, Mi Ra Park, Tae-Sik Yoon and Chi Jung Kang, “Resistive switching characteristics of Ag/MnO/CeO2/Pt heterostructures memory devices”, Microelectronic Engineering, 189, 28-32 (2018)   DOI: 10.1016/j.mee.2017.12.014 
  39. Tae Sung Lee, Nam Joo Lee, Haider Abbas , Quanli Hu, Tae-Sik Yoon, Hyun Ho Lee, Ee Le Shim and Chi Jung Kang, "A study on the resistance switching of Ag2Se and Ta2O5 heterojunctions using structural engineering", Nanotechnology, 29(3), 035202 (2018)   DOI: 10.1088/1361-6528/aa9e79
  40. Haider Abbas , Yawar Abbas, Mi Ra Park, Quanli Hu, Tae Sung Lee, Jongweon Cho, Tae-Sik Yoon, Young Jin Choi and Chi Jung Kang, "Resistive switching characteristics of tantalum oxide and titanium oxide heterojunction devices", Journal of Nanoscience and Nanotechnology, 17(10), 7150-7154 (2017)   DOI: 10.1166/jnn.2017.14730 
  41. Haider Abbas , Yawar Abbas, Son Ngoc Truong, Kyeong-Sik Min, Mi Ra Park, Jongweon Cho, Tae-Sik Yoon and Chi Jung Kang, "A memristor crossbar array of titanium oxide for non-volatile memory and neuromorphic applications", Semiconductor Science and Technology, 32(6), 065014 (2017)   DOI: 10.1088/1361-6641/aa6a3a
  42. Tae Sung Lee, Nam Joo Lee, HK Lee, Yawar Abbas, Haider Abbas , Quanli Hu, Tae-Sik Yoon and Chi Jung Kang, "The forming-free bipolar resistive switching characteristics of Ag2Se thin film", Journal of Physics D: Applied Physics, 50(20), 205103 (2017)   DOI: 10.1088/1361-6463/aa6ae7
  43. Yawar Abbas, Mi Ra Park, Quanli Hu, Tae Sung Lee, Haider Abbas , Tae-Sik Yoon and Chi Jung Kang, “Resistive switching characteristics of Tantalum oxide with Different top electrodes", Journal of Nanoscience and Nanotechnology, 16(10), 10231-10236 (2016)   DOI: 10.1166/jnn.2016.13133
  44. Mi Ra Park, Yawar Abbas, Quanli Hu, Haider Abbas , Nam Joo Lee, Tae Sung Lee, Tae-Sik Yoon and Chi Jung Kang, “Resistive Switching Characteristics of Ta2O5 Thin Film and Maghemite Nanoparticles Assembly Hybrid Device”, Journal of Nanoscience and Nanotechnology, 16(10), 10225-10230 (2016)   DOI: 10.1166/jnn.2016.13132
  45. Quanli Hu, Yawar Abbas, Haider Abba s, Mi Ra Park, Tae-Sik Yoon and Chi Jung Kang, “Resistive switching characteristics in manganese oxide and tantalum oxide devices”, Microelectronic Engineering, 160, 49-53 (2016)   DOI: 10.1016/j.mee.2016.02.050
  46. Mi Ra Park, Yawar Abbas, Haider Abbas , Quanli Hu, Tae Sung Lee, Young Jin Choi, Tae-Sik Yoon, Hyun-Ho Lee and Chi Jung Kang “Resistive Switching Characteristics in Hafnium Oxide, Tantalum Oxide and Bilayer Devices”, Microelectronic Engineering, 159, 190-197 (2016)   DOI: 10.1016/j.mee.2016.03.043


Selected Conference Presentations:


  1. “The Coexistence of Volatile and Non-volatile Resistive Switching in WTe2 Conductive Bridge Random Access Memory Devices for Neuromorphic Computing”, Oral Presentation at 49th International Conference on Micro and Nano Engineering, Berlin, Germany (MNE 2023)
  2. “Emulation of Synaptic Plasticity in Memristor Crossbar Arrays for Neuromorphic Applications”, Oral Presentation at International Conference on Memristive Materials, Devices & Systems, NIMS, Japan (MEMRISYS 2021)
  3. “Synaptic and Nonvolatile Memory Characteristics in Ag/HfO2/Pt Structured Conductive Bridge Random Access Memory Devices”, Oral Presentation at The 27th Korean Conference on Semiconductors, Gangwon-do, Korea (KCS 2020)
  4. “Threshold switching memristor with Ag/Nitrogen-doped Graphene Oxide Quantum Dots/Pt structure as an electronic synaptic device”, Oral Presentation at 17th International Nanotech Symposium & Nano-Convergence Expo, Ilsan, Korea (NANO KOREA 2019)
  5. "Nonvolatile resistive switching in IGZO and MnO Hybrid Devies", Poster Presentation at International Conference on Nanoscience and Nanotechnology , University of Wollongong, Australia (ICONN 2018)
  6. "Unipolar resistive switching characteristics of manganese oxide hybrid device", Poster Presentation at 30th International Microprocesses and Nanotechnology Conference, Jeju, Korea (MNC 2017)
  7. “MnO thin film and MnO nanoparticles assembly hybrid device memory characteristics”, Oral Presentation at International Conference on Advanced Materials & Processing, Mehran University of Engg. & Tech. Jamshoro, Pakistan (ICAMP'17)
  8. "Resistive switching characteristics of tantalum oxide and titanium oxide heterojunction device", Poster Presentation at 14th International Nanotech Symposium & Nano-Convergence Expo, Ilsan, Korea (NANO KOREA 2016)
  9. “Resistive Switching Characteristics of Ta2O5 Thin Film and Maghemite Nanoparticles Assembly Hybrid Device”, Poster Presentation at 13th International Nanotech Symposium & Nano-Convergence Expo, Seoul, Korea (NANO KOREA 2015)

Patents:

  1. Diing Shenp Ang and Haider Abbas,  "Memory device and method for manufacturing the same",  US Patent Application No. 18/582,308 (2024)


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