[국외]
- Improved Resistive Switching Characteristics Observed in Amorphous Boron Nitride-based RRAM Device via Oxygen Doping: A Study based on Bulk and Interface Traps Analysis  , Materials Science in Semiconductor Processing (2024)
- Enhancing the resistive switching properties of transparent HfO2-based memristor devices for reliable gasistor applications, Sensors (2024)
- Advanced recovery and enhanced humidity tolerance of CNTs gas sensor using a filament heater, Chemical Engineering Journal (2024)
- Dynamic Response and Swift Recovery of Filament Heater-integrated Low-power Transparent CNT Gas Sensor, Advanced Functional Materials (2024)
- Advances in MXene-based Synaptic Devices and Sensors: Review  , Materials Today Physics (2024)
- Enhanced optical and electrical properties of indium tin oxide for solar cell applications via post-microwave treatment, Optical Materials (2024)
- Influence on post-treatment process on optical and electrical properties of IZO thin films, Transactions on Electrical and Electronic Materials (2024)
- Influence of en-APTAS membrane on NO gas selectivity of HfO2-based memristor gas sensors, Japanese Journal of Applied Physics (2024)
- Response Characteristic in Discontinuous NO Gas Flows for Boron Nitride Memristor Gas Sensor Devices, Sensors And Actuators B-Chemical 401 (2024)
- Low-Power Consumption IGZO Memristor-Based Gas Sensor Embedded in an Internet of Things Monitoring System for Isopropanol Alcohol Gas, Micromachines (2024)
- Comprehensive analysis of reaction mechanisms in reduced graphene oxide and hematite heterostructure gas sensors, Journal of Alloys and Compounds (2023)
- Enhanced Memristor-based Gas Sensor for Fast Detection Using a Porous Carbon Nanotube Top Electrode with Membrane, Cell Reports Physical Science 4 (2023)
- NO Sensing Properties of BN-based Memristor Sensor Array for Real-time NO Monitoring-Systems, Sensors and Actuators, B: Chemical 394 (2023)
- Self–tuning PID controller based on analog–digital hybrid computing with double–gate SnS2 memtransistor, Nanoscale (2023)
- Thickness Optimization of Charge Transport Layers on Perovskite Solar Cells for Aerospace Applications, Nanomaterials 13 (2023)
- Ultra-low operation current and abnormal bipolar switching phenomena of hydrogen-passivated HfO2 memristive devices for low power artificial neural network applications, Ceramics International 49 (2023)
- Correlation between sensing accuracy and read margin of a memristor-based NO gas sensor array estimated by neural network analysis, ACS Sensors (2023)
- Influence of WO3-based Antireflection Coatings on Current Density in Silicon Heterojunction Solar Cells, Nanomaterials 13 (2023)
- Effect of Hydrogen Annealing on Performances of BN-based RRAM, Nanomaterials 13 (2023)
- Energy-efficient and reconfigurable complementary filter based on analog–digital hybrid computing with SnS2 memtransistor, Nano Energy 109 (2023)
- Effects of Al2O3 Thickness in Silicon Heterojunction Solar Cells, Inorganics 11 (2023)
- Gas Detection and Recovery Characteristics at Room Temperature Observed in a Zr3N4-based Memristor Sensor Array, Sensors and Actuators, B: Chemical 376 (2023)
- Improvement in the energy conversion efficiency for silicon heterojunction solar cells due to SiOx inserted with conducting filaments , Journal of Alloys and Compounds 932 (2023)
- Highly sensitive oxygen sensing characteristics observed in IGZO based gasistor in a mixed gas ambient at room temperature, ACS Sensors (2022)
- Improved electrical and optical properties of IGZO transparent conductive oxide due to microwave treatment: Application to silicon solar cells, IEEE Access (2022)
- Correlation between Resistive Switching Characteristics and Density of Traps Observed in Zr3N2 Resistive Switching Memory Devices with TiN Barrier Electrode, Ceramics International (2022)
- IZO/ITO Double-layered Transparent Conductive Oxide for Silicon Heterojunction Solar Cells, IEEE Access (2022)
- Analog–digital hybrid computing with SnS2 memtransistor for low-powered sensor fusion, Nature Communications 13 (2022)
- Improved Resistive Switching Observed in Ti/Zr3N2/p-Si Capacitor via Hydrogen Passivation, IEEE Access 10 (2022)
- A nonlinear resistive switching behaviors of Ni/HfO2/TiN memory structures for self-rectifying resistive switching memory, Materials Characterization 182 (2021)
- Advanced recovery and high-sensitive properties of memristor based gas sensor devices operated at room temperature, ACS Sensors 6 (2021)
- Self-rectifying characteristics observed in O-doped ZrN resistive switching memory devices using Schottky barrier type bottom electrode, IEEE Access (2021)
- Self-rectifying resistive switching characteristics of Ti/Zr3N2/p-Si capacitor for array applications, Ceramics International 47 (2021)
- Low-Power True Random Number Generator Based on Randomly Distributed Carbon Nanotube Networks, IEEE Access 9 (2021)
- Self-rectifying resistive switching phenomena observed in Ti/ZrN/Pt/p-Si structures for crossbar array memory applications, Applied Physics Letters 118 (2021)
- Reduced Operation Current of Oxygen-Doped ZrN Based Resistive Switching Memory Devices Fabricated by the Radio Frequency Sputtering Method, Coatings 11 (2021)
- A tactile sensor system with sensory neurons and a perceptual synaptic network based on semivolatile carbon nanotube transistors, NPG Asia Materials (2020)
- Improved contact properties of single-walled carbon nanotube on p-AlGaN layers after microwave post-treatment, MATERIALS CHEMISTRY AND PHYSICS 252 (2020)
- 16-bit Fixed-Point Number Multiplication with CNT Transistor Dot-Product Engine, IEEE Access (2020)
- Parallel weight update protocol for a carbon nanotube synaptic transistor array for accelerating neuromorphic computing, NANOSCALE 12 (2020)
- Compliance current and temperature effects on non-volatile memory switching and volatile switching dynamics in a Cu/SiOx/p++-Si device, Applied Physics Letters 115 (2019)
- Impact of Synaptic Device Variations on Classification Accuracy in a Binarized Neural Network, Scientific Reports 9 (2019)
- Binarized Neural Network with Silicon Nanosheet Synaptic Transistors for Supervised Pattern Classification, Scientific Reports 9 (2019)
- Memory State Protected from Leakage Current in Ti/SiN/NiN/Pt Bilayer Resistive Random-Access Memory Devices for Array Applications, Semiconductor Science And Technology 34 (2019)
- Forming-Free One-Selector/One-Resistor Characteristics of Oxygen-Rich ITO Based Transparent Resistive Switching Memory via Defect Engineering Using the Reactive Sputtering Process, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 18 (2018)
- Synaptic Device Network Architecture with Feature Extraction for Unsupervised Image Classification , Small 14 (2018)
- Self-rectifying resistive switching behavior observed in Al2O3-based resistive switching memory devices with p-AlGaN semiconductor bottom electrode, Journal Of Alloys And Compounds 742 (2018)
- Impact of Synaptic Device Variations on Pattern Recognition Accuracy in a Hardware Neural Network, Scientific Reports 8 (2018)
- Encryption of Programmed Data of Resistive Random Access Memory Devices for Information Protection, JOURNAL OF NANOSCIENCE AND NANOTECHNOLOGY 17 (2017)
- An Efficient Stream Cipher for Resistive RAM, Ieice Electronics Express 14 (2017)
- Pattern Recognition Using Carbon Nanotube Synaptic Transistors with an Adjustable Weight Update Protocol, Acs Nano 11 (2017)
- Comprehensive Study of Write Operation Scheme in Multi-Level Resistive Switching Memory Array, Journal Of Nanoscience And Nanotechnology 16 (2016)
- Stable Bipolar Resistive Switching Characteristics Observed in 8×8 Pt/NiNx/Ti/TiN Crossbar Array Structures for Resistive Random Access Memories, Journal Of Nanoscience And Nanotechnology 16 (2016)
- Oxygen-doped Zirconium Nitride Based Transparent Resistive Random Access Memory Devices Fabricated by Radio Frequency Sputtering Method, Journal Of Alloys And Compounds 675 (2016)
- Compact Two State Variable Second Order Memristor Model, Small 12 (2016)
- Material insights of HfO2-based integrated 1-transistor-1-resistor resistive random access memory devices processed by batch atomic layer deposition, Scientific Reports 6 (2016)
- Intrinsic threshold switching responses in AsTeSi thin films, Journal Of Alloys And Compounds 667 (2016)
- Self-rectifying resistive switching behavior observed in Si3N4-based resistive random access memory devices, JOURNAL OF ALLOYS AND COMPOUNDS 651 (2015)
- Numerical study of read scheme in one-selector one-resistor crossbar array, SOLID-STATE ELECTRONICS 114 (2015)
- All ITO-based transparent resistive switching random access memory using oxygen doping method, JOURNAL OF ALLOYS AND COMPOUNDS 653 (2015)
- Fabrication of conducting-filament-embedded indium tin oxide electrodes: application to lateral-type gallium nitride light-emitting diodes., Optics Express 23 (2015)
- Carbon Nanotube Synaptic Transistor Network for Pattern Recognition, ACS APPLIED MATERIALS INTERFACES 7 (2015)
- Charge-trap flash memory using zirconium-nitride-based memristor switches, Journal Of Physics D - Applied Physics 48 (2015)
- Resistive switching characteristics of integrated polycrystalline hafnium oxide based one transistor and one resistor devices fabricated by atomic vapor deposition methods, JOURNAL OF VACUUM SCIENCE TECHNOLOGY B 33 (2015)
- Improved resistive switching properties by nitrogen doping in tungsten oxide thin films, THIN SOLID FILMS 583 (2015)
- Forming-free resistive switching characteristics and improved reliability in sub-stoichiometric NbNx films, PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS 9 (2015)

[국내]
- IoT를 사용한 센서 네트워크 기반의 실시간 토양 습도 모니터링 , 전기전자재료학회논문지 35 (2022)
- High sensitivity of isopropyl alcohol gas sensor based on memristor device operated at room temperature, Journal Of The Korean Physical Society 80 (2022)
- Improved Resistive Switching of SnO2 Based Resistive Random Access Memory Devices Using Post Microwave Treatment, Journal Of Electrical Engineering & Technology 16 (2021)
- Deep Sleep Mode Based NodeMCU-Enabled Humidity Sensor Nodes Monitoring for Low-Power IoT, Transactions on Electrical and Electronic Materials 21 (2020)
- Resistive Switching Phenomena of HfO2 Films Grown by MOCVD for Resistive Switching Memory Devices, Journal Of The Korean Physical Society 69 (2016)
- Resistive Switching Characteristics of Al/Si3N4/p-Si MIS-Based Resistive Switching Memory Devices, Journal Of The Korean Physical Society 69 (2016)

[국내]
- 텐덤 태양전지, 2024-07 (등록)
- 태양전지 및 이의 제조방법, 2024-05 (등록)
- 멤리스터 기반의 압력센서를 포함하는 리튬이온전지 및 이의 동작방법, 2023-12 (출원)
- 요철 구조가 적용된 전도성 필라멘트 기반 가스 센서 및 이를 이용한 가스 센싱방법, 2023-10 (출원)
- 텐덤 태양전지, 2023-05 (출원)
- 멤리스터기반의 압력 센서 및 이를 포함하는 리튬이온전지셀, 2022-12 (출원)
- 요철 구조가 적용된 전도성 필라멘트 기반 가스 센서 및 이를 이용한 가스 센싱방법, 2022-11 (출원)
- 멤리스터 기반의 가스센서를 포함하는 리튬이온전지, 2022-08 (출원)
- 저농도 산화질소 가스 검출가능한 개시스터, 2022-05 (출원)
- 태양전지 및 이의 제조방법, 2022-03 (출원)
- 저농도 일산화질소 가스 검출이 가능한 Gasistor 소자 제조 기술, 2021-05 (출원)
- 전도성 필라멘트 기반 가스 센서 및 이를 이용한 가스 센싱방법, 2019-07 (등록)
- 금속-산화막-금속 구조를 갖는 가스 센서 및 이의 동작방법, 2019-06 (등록)
- 전도성 필라멘트 기반 가스 센서 및 이를 이용한 가스 센싱방법, 2017-12 (출원)
- 금속-산화막-금속 구조를 갖는 가스 센서 및 이의 동작방법, 2017-09 (출원)
- 전도성 필라멘트 기반 가스 센서 및 이를 이용한 가스센싱방법, 2016-12 (출원)
- 빛물질을 이용한 유전 박막 제조방법, 2015-10 (출원)

- 반도체소자분석평가, 2021-12
- 전력반도체소자, 2020-09

- Enhancing the resistive switching properties of transparent HfO2-based memristor devices for reliable gasistor applications, ssdm 2024(The Japan Society of Applied Physics), 2024-09
- 투명 HfO2 기반 RRAM의 저항 스위칭 특성: 거친 표면의 하부 전극 영향 , 하계종합학술대회(대한전자공학회), 2024-06
- 마이크로파 처리로 제작된 IGZO/ZnO 이중 층 기반 투명 RRAM의 자가 정류 특성, 하계종합학술대회(대한전자공학회), 2024-06
- 리저버 컴퓨팅을 위한 마이크로파 처리로 제작된 IGZO 기반 투명 멤리스터, 하계종합학술대회(대한전자공학회), 2024-06
- 두께 변화에 따른 ZnO 기반 저항성 랜덤 액세스 메모리 소자에서 관찰된 향상된 저항성 스위칭 특성, 대한전자공학회 2024년도 하계종합학술대회(대한전자공학회), 2024-06
- 포름알데히드 감지를 위한 환원된 그래핀 산화물과 헤마타이트 복합체 기반의 고감도 가스 센서, 하계종합학술대회(대한전자공학회), 2024-06
- Enhancing Reliability of Transparent HfO -based RRAM through ITO Rough Surface Bott om Electrode for Resistive Switching Characteristics, 2024 한국전기전자재료학회 하계학술대회(한국전기전자재료학회), 2024-06
- 고효율 페로브스카이트 태양 전지를 위한 전자 및 정공 수송층 최적화 시뮬레이션, 2024년도 하계종합학술대회(대한전자공학회), 2024-06
- 후처리 공정을 통한 IZO 투명 전도성 사화물의 특성 개선, 대한전기학회, 2023-10
- Improved Response to NO Gas Observed in HfO2-based Gasistor Devices due to CNTs-Top Electrode and en-APTAS Membrane, ssdm 2023(The Japan Society of Applied Physics), 2023-09
- Resistive Switching Characteristics of HfO2-based RRAM with SWCNTs Top Electrode, 나노코리아 2023(나노코리아), 2023-07
- Microwave Treatment to Enhance Optical and Electrical Properties of ITO Nanowires for Solar Cell Applications, NANO KOREA 2023 Symposium The 21st International Nanotech Symposium and Exhibition(나노코리아), 2023-07
- Synaptic Response for Periodic NO Gas Stimulus of BN-based Memristor Sensor, INFOS 2023(INFOS ), 2023-06
- high-sensistivity reduced graphene oxide and hematite composite-based gas sensor for detecting formaldehyde , INFOS 2023(INFOS ), 2023-06
- high response characteristic of zr3n4-based memristor no gas sensor array at room temperature, INFOS 2023(INFOS ), 2023-06
- Study of Fast Recovery Characteristics of C H Gas Sensors Based on SnO Memristors, 한국전기잔자재료학회 하계학술대회(한국전기잔자재료학회), 2023-06
- Porous CNT electrode for high-response NO gas detection and gasistor application, IEEE NEMS(IEEE), 2023-05
- a study on the memristor-based gas senor with high sensitivity to NO gas, IEEE NEMS(IEEE), 2023-05
- C2H6 gas sensing characteristics of SnO2 based memristor, IEEE NEMS(IEEE), 2023-05
- Microwave-assisted annealing effects on InGaZnO thin films, IEEE NEMS(IEEE), 2023-05
- High-sensistivity reduced graphene oxide and hematite composite-based gas sensor for detecting formaldehyde, IEEE NEMS(IEEE), 2023-05
- 맴리스터 기반의 가스센서 소자 및 이를 이용한 실시간 모니터링 시스템 연구, 한국센서학회 춘계학술대회(한국센서학회), 2023-03
- study of room termperature SnO2-based gasistor for detecting C2H6 gas , 2023 한국광학회 동계학술대회(광학회), 2023-02
- gasistor array-based intelligent NO gas monitoring system, 제30회 한국반도체학술대회(한국반도체협의회), 2023-02
- high-response characteristics of memristor-based gas sensors operated at room temperature, 제30회 한국반도체학술대회(한국반도체협의회, 한국물리학회), 2023-02
- study of memristor based gas sensor devices , ICEIC 2023(IEEE, 대한전자공학회), 2023-02
- study of electrical and optical properties of igzo via microwave treatment, ICEIC 2023(IEEE, 대한전자공학회), 2023-02
- self-rectifying resistive switching characteristics of Ti/BN/p-Si structure for high-density memory application , 제30회 한국반도체학술대회(한국반도체협의회), 2023-02
- Effects of Al2O3 Thickness in Silicon Heterojunction Solar Cells, ENGE 2022(The Korean Institute of Metals and Materials), 2022-11
- Investigation of Ultra-Thin Silicon Wafer Fabricated by Stress-induced Lift-off Method Cut via Nickel Plating, ENGE 2022(The Korean Institute of Metals and Materials), 2022-11
- MgF2/ITO Antireflection Coating for Silicon Heterojunction Solar Cells, ENGE 2022(The Korean Institute of Metals and Materials), 2022-11
- SnO2 멤리스터 기반의 저전력/고민감 C2H6 상온 가스센서, 2022 대한전기학회(대한전기학회), 2022-10
- Effects of Al2O3/ITO Structure on Silicon Heterojunction Solar Cells, MH 22(싱가포르 재료학회), 2022-09
- Memristor-based gas sensor array for NO gas, MH 22(싱가포르 재료학회), 2022-09
- 어레이 기반 Gasistor 소자의 가스 센싱 연구, 2022 제53회 대한전기학회 하계학술대회(대한전기학회), 2022-07
- Ultrathin two-dimensional bonron nitride based gasistor, Optics and Photonics Congress 2022(한국광학회), 2022-07
- Effect s of Nickel P lating and A nneal ing Temperature on Stress induced Lift off Method cut for Ultra thin Silicon Wafer, Optics and Photonics Congress 2022(한국광학회), 2022-07
- NO 가스 센싱이 가능한 Memristor 기반의 가스 센서 소자 연구, Optics and Photonics Congress 2022(한국광학회), 2022-07
- IZO/ITO Double-layered Transparent Conductive Oxide for Silicon Heterojunction Solar Cells, ICESI2022(대한전기학회), 2022-05
- Microwave 후처리 후 IGZO 투명전극의 전기광학적 특성 연구, 한국 KMEMS 학술대회(마이크로나노시스템학회), 2022-04
- 상온에서 동작하는 SnO2 멤리스터 기반의 C2H6 가스 센서, 한국 KMEMS 학술대회(마이크로나노시스템학회), 2022-04
- 어레이 기반 Gasistor 소자의 가스 센싱 특성, 한국 KMEMS 학술대회(마이크로나노시스템학회), 2022-04
- Fast Response/Recovery of SnO2 Memristor-based C2H6 Gas Sensor Operated at Room Temperature, IEEE Student Paper Contest 2021(IEEE), 2021-12
- Self-rectifying Resistive Switching Memory in Ti/ZrxNy/p-Si structure, IEEE Student Paper Contest 2021(IEEE), 2021-12
- Self-rectifying characteristic observed in Al/ZrN/p-Si capacitor for non-volatile memory devices, Photonics Conference 2021(한국광학회), 2021-12
- IGZO 멤리스터 기반의 C2H6 가스 센서 연구, Photonics Conference 2021(광학회), 2021-12
- Investigation of High Sensitive and Fast Recovery Cjavascript:void(null);haracteristics on Memristor Based Gas Sensors, Photonics Conference 2021(한국광학회), 2021-12
- Multilevel Resistive Switching Characteristics in IGZO-based RRAM, Photonics Conference 2021(광학회), 2021-12
- Study of Sensitivity and Recovery Characteristics on Memristor Based Gas Sensors, ICAMD 2021(대학물리학회), 2021-12
- 멤리스터 기반 가스 센서 소자의 빠른 회복 및 상온 가스 센싱 특성 연구, 2021 대한전기학회 전기물성 응용부문회 추계학술대회(전기학회), 2021-10
- Room Temperature Ethanol Gas Sensor Characteristics of SnO2-based Gasistor, Optics and Photonics Congress 2021(한국광학회), 2021-07
- Stable Resistive Switching Characteristics of Oxygen-doped ZrN Materials for Memristor-based Gas Sensor, Optics and Photonics Congress 2021(광학회), 2021-07
- Self-rectifying Resistive Switching Characteristics of Ti/ZrN/Pt/p-Si for Gasistor Application, Optics and Photonics Congress 2021(광학회), 2021-07
- Enhanced Resistive Switching Characteristics of SnO2 for Gasistor Application Using Microwave Treatment, Optics and Photonics Congress 2021(광학회), 2021-07
- Study of Zr3N2-based Resistive Random Access Memory Crossbar Array for Gasistor Application, Optics and Photonics Congress 2021(한국광학회), 2021-07
- Resistive Switching Characteristics of Ti/Zr3N2/p-Si Capacitors for Selector-free Array Applications , 2020 IEEE Seoul Section Student Paper Contest(IEEE ), 2020-12
- Self-rectifying Resistive Switching Characteristics of Ti / ZrN / Pt / p-Si Devices Fabricated with MIM Structure , 2020 IEEE Seoul Section Student Paper Contest(IEEE), 2020-12
- Multi-level switching Zr3N4 RRAM 소자의 Trap 분석, 대한전기학회 추계학술대회(대한전기학회 ), 2020-11
- MIS 기반 저항성 스위칭 메모리 소자의 자가 정류 특성 연구, 대한전기학회 추계학술대회(대한전기학회), 2020-11
- Ti/ZrxNy/p-Si 구조의 RRAM의 자가 정류 저항 스위칭 특성에 대한 연구, 한국진공학회 하계정기학술대회(한국진공학), 2020-08
- p-Si/Pt/ZrN/Ti 구조의 1S1R 저항변화메모리 소자의 저항변화특성 연구, 한국진공학회 하계정기학술대회(한국진공학회), 2020-08
- A Study on Resistive-Switching Characteristics of Zirconium Nitride Deposited by Reactive Sputtering Method, 나노코리아(과학시술정보통신부/산업통상자원부), 2020-07
- Improving Reliability and Self-rectifying Characteristics of ZrN-based RRAM by Adjusting N2 Gas, 나노코리아 2020(과학기술정보통신부/산업통상자원부), 2020-07
- Resistive switching characteristics of N-doped HfO2 films, nano korea 2019(나노기술연구협의회 등), 2019-07
- Resistive switching characteristics of O-doped ZrN films, nano korea 2019(나노기술연구협의회 등), 2019-07
- Microwave Treatment Effect on Contact and Transparent Properties in Single-Walled Carbon Nanotube Based Transparent Conductive Electrodes for UV-LED applications, 8th International Colloids Conference, 2018-06
- Bipolar resistive switching and current flow mechanism in SnO2 thin film, 8th International Colloids Conference, 2018-06
- Self-selector unipolar resistive switching behavior on Ni/Al2O3/p-AlGaN memory structures , apos2018(EiC, IEEJ 등), 2018-05
- Electrical and optical properties of SWNT TCEs on p-AlGaN via the microwave treatment, apos2018(EiC, IEEJ 등), 2018-05
- Resistive Switching Behavior in Al2O3-based Resistive Memory Devices with p-AlGaN Bottom Electrodes, iceic 2018(IEEE, IEIE 등), 2018-01
- Self-rectifying Resistive Switching Observed in Nickel/Aluminium-Oxide/p-type Aluminium-Gallium-Nitride Based Metal Insulator Semiconductor Resistive Random Access Me, IEEE SEOUL SECTION STUDENT PAPER CONTEST 2017(IEEE SEOUL SECTION ), 2017-12
- Self-rectifying Resistive Switching Behavior Observed in a SiN/NiN Stacked Structure for Resistive Random Access Memory , icae 2017(icae), 2017-11
- Bipolar resistive switching and current flow mechanism in SnO2 thin film , icae 2017(icae), 2017-11
- Contact Properties of SWNT TCEs via the Microwave Treatment, ssdm 2017(일본 물리학회), 2017-09
- SiN/NiN 다층 기반의 저항변화메모리 소자의 저항변화 특성 연구, 전자공학회 2017년 하계종합학술대회(전자공학회 ), 2017-07
- Microwave Treatment를 통한 SWNT 기반 투명전극의 오믹 접촉 특성 연구, 전자공학회 2017년 하계종합학술대회(전자공학회), 2017-07
- Oxygen-rich indium tin oxide based transparent forming free resistive random access memory devices with cross-bar array structures, Nano Korea 2017(Nano Korea), 2017-07
- Scaling effect of device size on resistive switching characteristics in SiN-based RRAM, nano korea 2017(나노코리아), 2017-07
- Material insights into integrated HfO2-based resistive random access memory arrays, 20th Conference on “Insulating Films on Semiconductors”(Innovations for High Performance Microelectronics ), 2017-06
- 산도 도핑 ITO 기반의 Forming free 투명 CBA 저항변화메모리, 한국 마이크로전자 및 패키징학회 춘계학술대회(한국 마이크로전자 및 패키징학회 ), 2017-04
- LPCVD Si3N4 기반 Self-Rectifying 저항변화메모리의 저항변화특성 연구, 한국 마이크로전자 및 패키징학회 춘계학술대회(한국 마이크로전자 및 패키징학회), 2017-04
- HfO2 기반 Self-Rectifying 저항변화메모리의 저항변화특성 연구, 한국 마이크로전자 및 패키징학회 춘계학술대회(한국 마이크로전자 및 패키징학회), 2017-04
- Improved Controllability of Conductance by Inserting Al2O3 in SiN-based Resistive Switching Memory, 제24회 한국반도체학술대회(한국물리학회 등), 2017-02
- Self-compliance bipolar resistive switching in SiN-based RRAM with MIS structure, 제24회 한국반도체학술대회(한국물리학회 등), 2017-02
- Asymmetry Current Voltage Behaviors of Ni/HfO2/TiN Memory Structures for Self-rectifying Resistive Switching Memory Using Quantum Tunneling Phenomenon, International Conference on Electronics, Information and Communication(IEEE, IEIE), 2017-01
- Nonlinear Current Voltage Behaviors of Ni/HfO2/TiN Memory Structures for Self-rectifying Resistive Switching Memory, IEEE Seoul Section Student Paper Contest 2016(IEEE Seoul Section), 2016-12
- Self-rectifying and Forming Free Stable Resistive Switching Behavior Observed in HfO2-based Memory by Quantum Tunneling Mechanism , 29th International Microprocesses and Nanotechnology Conference(한국물리학회 등), 2016-11
- All ITO-based Transparent Crossbar Array Resistive Memory Devices, 20th International Vacuum Congress (IVC-20)(Korean Vacuum Society), 2016-08
- Dopant concentration dependent resistive switching characteristics in silicon nitride-based memory devices, 20th International Vacuum Congress (IVC-20)(Korean Vacuum Society), 2016-08
- Encryption of Programmed Data of Resistive Switching Memory Devices for Information Protection, nano korea 2016, 2016-07
- Comparison of forming voltage in oxide-based resistive switching memories, International Conference on Electronics, Information, and Communication (ICEIC) 2016(IEEE & IEIC), 2016-01
- Conduction Mechanism in Resistive Switching Memory Cells Using HfO2 film, 9th International Conference on Advanced Materials and Devices (ICAMD2015)(Korean Physical Society), 2015-12
- Investigation on Reliability of Ni/Si3N4/SiO2/Si RRAM Device, 9th International Conference on Advanced Materials and Devices (ICAMD2015)(Korean Physical Society), 2015-12
- Forming/Selector-Free Resistive Switching Characteristics Observed in HfO2-based Memory Cells, IEEE Seoul Section_Student Paper Contest 2015(IEEE Seoul Section), 2015-12
- Resistive switching property with current limited region in silicon-based RRAM cells , 9th International Conference on Advanced Materials and Devices (ICAMD2015) (Korean Physical Society), 2015-12
- Transparent resistive random access memory using oxygen rich indium tin oxide films, 9th International Conference on Advanced Materials and Devices (ICAMD2015) (Korean Physical Society), 2015-12
- Self-rectifying Resistive Switching Behavior Observed in Silicon Nitride-Based Resistive Switching Memory Using Low Pressure Chemical Vapor Deposition, MNC 2015(THE JAPAN SOCIETY OF APPLIED PHYSICS), 2015-11
- Stable Nonpolar Resistive Switching Characteristics of Fully Transparent Resistive Switching Memory Using Only ITO Films, MNC 2015(THE JAPAN SOCIETY OF APPLIED PHYSICS), 2015-11
- 실리콘 산화막 기반의 저항변화메모리, 대한전자공학회 정기총회 및 추계학술대회(대한전자공학회), 2015-11
- Nitride-Based RRAM Devices for Various Applications, The 30th International Technical Conference on Circuits / Systems, Computers and Communications(대한전자공학회(IEIE)), 2015-07
- 1D-1R Characteristics of Si/Si3N4/Ti Devices with ultrathin SiO2 Barrier Layer, NANO KOREA 2015 Symposium (제 13회 국제나노기술심포지엄)(나노코리아 조직위원회(나노기술연구협의회, 나노융합산업연구조합)), 2015-07
- Atomic Layer Deposited HfO2-Based 1T1R RRAM Devices With TiN Bottom Electrode Fabricated by Atomic Vapor Deposition, 2015 European Materials Research Society (E-MRS) (European Materials Research Society), 2015-05
- CMOS process integration of HfOx-based resistive memory cells (oral 발표), AIV XXII Conference, 2015-05
- CMOS process integration of HfOx-based resistive memory cells (poster 발표), AIV XXII Conference, 2015-05